< spike_gen >
The spike_gen object defines a method of generating spikes.
The input to the spike generator differs across models, but includes
at least one time varying function that, after appropriate scaling and
truncation, is used to drive the spike generation. The examples below
demonstrate different spike generation methods. Some models may not
allow all types of spike generation.
poisson
Spikes are generated according to a time-varying mean rate. The rate
is determined by taking the output from the previous stage of the
model and adding 'offset0', multiplying by 'scale' and adding
'offset'. The resulting rate is half-wave rectified (i.e., values
less than zero are set to zero). Spikes are generated randomly
according to this rate, and 'toffset' is added to the spike times.
<spike_gen>
type poisson # Spike generation algorithm
offset0 0.0 # Added *before* scaling [0.0]
scale 1.0 # Multiplying factor [1.0]
offset 0.0 # Added *after* scaling [0.0]
toffset 0.040 # (s) Time offset (delay) added to spikes [0.0]
# The following parameters allow a refractory period. However, it should
# be noted that adding the refractory period will distort the shape of
# the actual mean rate. The refractory period is implemented in a constant
# rate Poisson process, and this process is then time-warped to create
# the inhomogeneous process, but the refractory period is not taken into
# account with the time warping.
# After each spike, a duration is chosen from a Gaussian distribution for
# the refractory period. Negative values are discaarded, and the first
# non-negative value is taken.
refract_mean 0.006 # (s) Mean of Gaussian duration refractory period
refract_sd 0.002 # (s) SD of refractory period
</spike_gen>
ifc
Conductance-driven integrate and fire spike generation.
<spike_gen>
type ifc # Spike generation algorithm
v_spike 10.0 # (mV) Spike height
v_th_x -52.5 # (mV) Spike threshold
v_reset_x -57.8 # (mV) Spike reset voltage
tau_r_ad 1.00 # (ms) Adaptation rise time
tau_f_ad 80.0 # (ms) Adaptation fall time
gbar_ad 0.0 # (nS) Adaptation conductance
v_ex 0.0 # (mV) Excitatory reversal potential
v_in -70.0 # (mV) Inhibitory reversal potential
v_ad -90.0 # (mV) Adaptation reversal potential
v_leak_x -81.6 # (mV) Leakage reversal potential
g_leak_x 18.0 # (nS) Leakage conductance
c_x 214.0 # (pF) Membrane capacitance
trefr_x 1.5 # (ms) Refractory period
gx_scale 2.0 # ( ) Scale excitatory g, before adding bias
gx_bias 0.0 # (nS) Constant added to g, after any scaling
# Membrane conductance noise
type gfg # gfg = Gaussian filtered Gaussian noise
mean 0.0 (nS) # mean
sd 4.0 (nS) # standard deviation
tsd 2.0 (ms) # temporal SD
<>
grect 1 # half-wave rectify gx, gi after adding noise
</spike_gen>
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